South Korean technology giant Samsung has announced that mass production of the 10 nano meter class 8 gigabit Double Data 4 (DDR4) DRAM has begun. Samsung has said that the new chip will offer a transfer rate of 3,200 megabits per second. The company has also said that it had to overcome technical challenges in DRAM scaling in order to manufacture this chip. To do this, the company had to master ArF (argon fluoride) immersion lithography, utilising EUV (extreme ultra violet) equipment.
Speaking about this, a senior executive of Samsung Electronics said, Samsung`s 10nm-class DRAM will enable the highest level of investment efficiency in IT systems, thereby becoming a new growth engine for the global memory industry. In the near future, we will also launch next-generation, 10nm-class mobile DRAM products with high densities to help mobile manufacturers develop even more innovative products that add to the convenience of mobile device users.
The chip will offer significantly improved wafer productivity over the 20nm 8Gb DDR4 DRAM it launched earlier. The high speed data transfer rate takes over from the 20 nm DDR4 DRAM which has a speed of 2400 megabits per second. Thats a 30 percent increase in speed. The chip will also be a power saver in that it is energy efficient and offered between 10 and 20 per cent lesser power consumption.